Research and Development
Our Development team is comprised of industry experts with more than 20 years of experience in the microwave field of RF design.
Inspower experts and experienced designers have the skills and knowledge to quickly and accurately design and produce the most demanding RF and microwave amplifier module and systems, customized to meet specific needs and performance requirements.
Our experienced Development team use design tools and well proven manufacturing techniques combined with the utilization of the latest advanced semiconductor technologies to offer the most up to date solutions to customer requirements.
Inspower's product lines include the following products
- freely utilize LDMOS, GaN, MOSFET, GaAS FET and any other devices.
- Especially Ultra broad band amplifier technology using GaN Device.
- Linear Power amplifier using Feed-forward, Cross-cancellation and pre-distortion technique.
- High efficiency Amplifier using Symmetrical and Asymmetrical Doherty Configuration.
- RF Hybrid IC and Pallet amplifier manufacturing technology.
Manufacturing
100% in-house manufacture and an extensive stock of RF & microwave materials and components enables us to design and produce production quantities as well as prototypes in the shortest of timescales.
Our fully equipped test and measurement system provides alignment and test capability together with 100% burn-in screening for our wide product range, with frequencies from DC to 20+ GHz and output power from several watts to several kilo-watts. Calibrated network & spectral analysis, noise and power measurement ensures that you get a product fully tested for compliance and quality is it for a single standard amplifier, or a large quantity of custom designed sub-systems.